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Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate
Author(s) -
Matsui Misako,
Habuka Hitoshi
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532362
Subject(s) - trichlorosilane , epitaxy , substrate (aquarium) , wafer , materials science , silicon , rotation (mathematics) , enhanced data rates for gsm evolution , layer (electronics) , optoelectronics , composite material , geometry , geology , telecommunications , oceanography , mathematics , computer science
Silicon epitaxial growth on a 450 mm diameter silicon substrate and the related transport phenomena in a trichlorosilane‐hydrogen system were numerically evaluated. In order to minimize the gas species transport distance, the single‐wafer high‐speed rotation vertical epitaxial reactor was studied assuming the future conditions and geometry. The edge of the large diameter substrate moves very quickly and induces a horizontal gas flow. The temperature gradient near the substrate surface significantly increases with the substrate rotation rate. The induced gas flow forms a thin boundary layer for effectively transporting the gas species to the substrate surface. A uniform film thickness profile is produced, consuming a high amount of trichlorosilane by the large substrate surface.