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Semipolar (11 2 ― 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates
Author(s) -
Dinh Duc V.,
Akhter Mahbub,
Presa Silvino,
Kozlowski Grzegorz,
O'Mahony Donagh,
Maaskant Pleun P.,
Brunner Frank,
Caliebe Marian,
Weyers Markus,
Scholz Ferdinand,
Corbett Brian,
Parbrook Peter J.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532350
Subject(s) - light emitting diode , materials science , template , optoelectronics , wafer , epitaxy , diode , luminescence , metalorganic vapour phase epitaxy , gallium nitride , nanotechnology , layer (electronics)
Abstractauthoren InGaN multiple quantum well light‐emitting diodes (LEDs) were grown on chemically–mechanically polished (11 2 ― 2) GaN templates (up to 100 mm diameter wafers) by metalorganic vapour phase epitaxy. Initial GaN overgrowth on the polished templates in nitrogen ambient maintained the polished surface. The peak emission wavelength of the LEDs varied from 445 to 550 nm. In contrast to the simultaneously grown LEDs on as‐grown templates, the LEDs on polished templates have very smooth surface morphology, uniform luminescence, and higher output power. Fluorescence images of 445 nm LEDs grown on (a) as‐grown and (b) polished (11 2 ― 2) GaN templates.
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