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Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness
Author(s) -
Noguchi Tomohiro,
Morita Koudai,
Simanullang Marolop,
Xu Zhengyu,
Usami Koichi,
Kawano Yukio,
Kodera Tetsuo,
Oda Shunri
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532340
Subject(s) - nanowire , materials science , chemical vapor deposition , shell (structure) , epitaxy , layer (electronics) , core (optical fiber) , vapor–liquid–solid method , nanotechnology , deposition (geology) , germanium , optoelectronics , silicon , chemical engineering , composite material , paleontology , sediment , biology , engineering
Ge/Si core/shell nanowires are fabricated with narrow (20 nm) Ge core and thin (2 nm) Si shell. Ge nanowires are prepared by vapor–liquid–solid (VLS) chemical vapor deposition (CVD). The low‐temperature (450 °C) process by using Si 2 H 6 gas as a Si CVD source is essential to form ultrathin layer of epitaxial Si film onto very narrow Ge nanowires. Accumulation of holes in Ge nanowires confined in the Si shell is confirmed by electrical measurement.