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MOCVD of TiO 2 thin films from a modified titanium alkoxide precursor
Author(s) -
Kim Sun Ja,
Dang VanSon,
Xu Ke,
Barreca Davide,
Maccato Chiara,
Carraro Giorgio,
Bhakta Raghunandan K.,
Winter Manuela,
Becker HansWerner,
Rogalla Detlef,
Sada Cinzia,
Fischer Roland A.,
Devi Anjana
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532271
Subject(s) - x ray photoelectron spectroscopy , rutherford backscattering spectrometry , alkoxide , metalorganic vapour phase epitaxy , nuclear reaction analysis , analytical chemistry (journal) , thin film , titanium , materials science , chemical vapor deposition , scanning electron microscope , raman spectroscopy , secondary ion mass spectrometry , microstructure , epitaxy , mass spectrometry , chemistry , nanotechnology , chemical engineering , ion , optics , metallurgy , composite material , biochemistry , physics , organic chemistry , layer (electronics) , chromatography , engineering , catalysis
A new titanium precursor, [Ti(OPr i ) 2 (deacam) 2 ] (deacam = N , N ‐diethylacetoacetamide), was developed by the reaction of the parent Ti alkoxide with the β‐ketoamide. The compound, obtained as a monomeric six‐coordinated complex, was used in metal organic chemical vapor deposition (MOCVD) of TiO 2 both as a single source precursor (SSP) and in the presence of oxygen. The high thermal stability of [Ti(OPr i ) 2 (deacam) 2 ] enabled the fabrication of TiO 2 films over a wide temperature range, with steady growth rates between 500 and 800 °C. The microstructure of the obtained systems was analyzed by X‐ray diffraction (XRD) and Raman spectroscopy, whereas atomic force microscopy (AFM) and field emission‐scanning electron microscopy (FE‐SEM) measurements were performed to investigate the surface morphology and nanoorganization. Film composition was investigated by complementary techniques like Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X‐ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS). The electrical properties of the layers were investigated by performing capacitance voltage ( C – V ) and leakage current measurements.