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Potential profile evaluation of a diamond lateral p–n junction diode using Kelvin probe force microscopy
Author(s) -
Shirota Kazuya,
Takeuchi Daisuke,
Kato Hiromitsu,
Makino Toshiharu,
Ogura Masahiko,
Okushi Hideyo,
Yamasaki Satoshi
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532251
Subject(s) - kelvin probe force microscope , diamond , optoelectronics , diode , materials science , thermal conduction , doping , p–n junction , volta potential , microscopy , depletion region , chemistry , optics , semiconductor , atomic force microscopy , nanotechnology , physics , composite material
We report Kelvin probe force microscopy (KPFM) analysis results for a diamond lateral p–n junction diode, which consists of a junction between band conduction and hopping conduction layers, and discuss the potential spatial distribution in the device. KPFM analysis was performed in order to clarify the real device operation mechanism because it can be used to determine surface potential profiles. The lateral p–n junction diode was fabricated using a selective growth technique for heavy phosphorus doping, resulting in hopping conduction layers. In the static state, the KPFM analysis results for the depletion layer width and built‐in potential were thought to be reasonable for a diamond p–n junction diode. In addition, the potential profile was obtained, even during the application of different bias voltages. These results indicate that KPFM analysis is appropriate for diamond devices.