Power diamond vertical Schottky barrier diode with 10 A forward current

We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 10 16 and 2 × 10 17  cm −3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25–200 °C. The self‐heating effect further improves the diode forward characteristics. We tested different crystal‐to‐case thermal interfaces. Diodes have less than 3.5 V forward voltage drop for 10 A at 25 °C and less than 1 V at 200 °C with the on‐resistance as low as 0.05 Ω (10 mΩ cm 2 ). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200 MW/cm 2 can be made for diamond drift layer with the blocking field of 2 MV/cm and as high as 18000 MW/cm 2 in the case of E MAX ∼8 MV/cm.