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Power diamond vertical Schottky barrier diode with 10 A forward current
Author(s) -
Tarelkin Sergey,
Bormashov Vitaly,
Buga Sergei,
Volkov Alexander,
Teteruk Dmitry,
Kornilov Nikolay,
Kuznetsov Mikhail,
Terentiev Sergey,
Golovanov Anton,
Blank Vladimir
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532213
Subject(s) - diode , schottky diode , diamond , materials science , optoelectronics , schottky barrier , figure of merit , breakdown voltage , doping , thermal conductivity , voltage , electrical engineering , composite material , engineering
We developed and investigated the vertical diamond Schottky barrier diodes on large area IIb HPHT high quality substrates. The drift CVD layers with boron content of 10 16 and 2 × 10 17 cm −3 were made. The diodes possess an integral forward current higher than 10 A in the temperature range of 25–200 °C. The self‐heating effect further improves the diode forward characteristics. We tested different crystal‐to‐case thermal interfaces. Diodes have less than 3.5 V forward voltage drop for 10 A at 25 °C and less than 1 V at 200 °C with the on‐resistance as low as 0.05 Ω (10 mΩ cm 2 ). We calculated the real Baliga figures of merit (BFOM) of diodes taking into account an incomplete acceptors ionization and a finite substrate resistivity. The low doped diamond conductivity model was used to calculate and optimize the BFOM for various diode designs. The diodes with BFOM up to 200 MW/cm 2 can be made for diamond drift layer with the blocking field of 2 MV/cm and as high as 18000 MW/cm 2 in the case of E MAX ∼8 MV/cm.