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Stability of inverted organic solar cells with low‐temperature ZnO buffer layer processed from aqueous solution
Author(s) -
Chen Dazheng,
Zhang Chunfu,
Wei Wei,
Wang Zhizhe,
Heng Ting,
Tang Shi,
Han Genquan,
Zhang Jincheng,
Hao Yue
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532207
Subject(s) - materials science , organic solar cell , energy conversion efficiency , open circuit voltage , degradation (telecommunications) , short circuit , layer (electronics) , current density , aqueous solution , active layer , buffer (optical fiber) , chemical engineering , optoelectronics , voltage , nanotechnology , chemistry , composite material , organic chemistry , electronic engineering , electrical engineering , engineering , polymer , physics , thin film transistor , quantum mechanics
In this work, the long‐term stability for inverted organic solar cells (OSCs) using a poly(3‐hexylthiophene‐2, 5‐diyl):[6, 6]‐phenyl C 61 butyric acid methyl ester blend and a low‐temperature ZnO buffer layer processed from aqueous solution is investigated. The same devices with ZnO buffer layers annealed at different temperatures have been sequentially stored in an air‐N 2 –air environment and tested during 4320 h. It is found that the devices with ZnO annealed at 80 and 100 °C show good stability in three periods of air, N 2 , and air conditions, the degradation of power conversion efficiency (PCE) shows similar tendency to that of short circuit current density with relatively steady open circuit voltage and fill factor. For devices with 70 °C annealed ZnO buffer layer, their PCE climbs up and then declines in the first period. Interestingly, at the beginning of third period, an improvement of photovoltaic parameters for most devices is observed from statistical results, which may be related to the change of oxygen concentration in devices and oxygen desorption in light soaking. In short, all devices show a relatively good stability and the simple ZnO deposition method is a promising technique in fabricating inverted OSCs and flexible devices with long lifetime. Degradation of PCE for inverted OSCs in 4320 h.