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Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus
Author(s) -
PinaultThaury MarieAmandine,
Stenger Ingrid,
Jomard François,
Chevallier Jacques,
Barjon Julien,
Traore Aboulaye,
Eon David,
Pernot Julien
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532206
Subject(s) - diamond , phosphorus , schottky diode , materials science , schottky barrier , capacitance , doping , optoelectronics , etching (microfabrication) , diode , chemistry , nanotechnology , metallurgy , electrode , layer (electronics)
In a previous work, we discovered a new set of growth parameters for fabricating (100) homoepitaxial phosphorus‐doped n‐type diamond with unique properties: full incorporation of phosphorus donors in substitutional sites together with a low surface roughness. In this work, a planar type Schottky barrier diode has been fabricated on the epilayer and C – V characteristics were measured. From the capacitance properties, the net donor density and the Schottky barrier height were experimentally determined to be ∼3.1 × 10 16 cm −3 and ∼4.65 eV, respectively. The phosphorus electrical activity in our (100) n‐type diamond epilayer is discussed in comparison with previous works on the (100) and (111) orientations.