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Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane
Author(s) -
Bolshakov Andrey,
Ralchenko Victor,
Sedov Vadim,
Khomich Andrey,
Vlasov Igor,
Khomich Alexander,
Trofimov Nikolay,
Krivobok Vladimir,
Nikolaev Sergei,
Khmelnitskii Roman,
Saraykin Vladimir
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532174
Subject(s) - photoluminescence , materials science , silane , diamond , doping , crystal (programming language) , silicon , analytical chemistry (journal) , chemical vapor deposition , epitaxy , optoelectronics , nanotechnology , chemistry , layer (electronics) , metallurgy , organic chemistry , computer science , composite material , programming language
Homoepitaxial single crystal diamond layers with bright photoluminescence (PL) of silicon‐vacancy (SiV) color centers at 738 nm wavelength have been grown on (100) diamond substrates by a microwave plasma CVD using a controlled Si doping via adding silane to CH 4 H 2 reaction gas mixture in the course of the deposition process. In the range of the silane concentrations SiH 4 /CH 4 explored, from 0 to 2.4%, the SiV PL intensity shows a nonmonotonic behavior with silane addition, with a maximum at 0.6%SiH 4 /CH 4 , and a rapid PL quenching at higher Si doping. The maximum SiV concentration of ≈450 ppb in the samples has been determined from optical absorption spectra. It is found that the SiV PL intensity can strongly, an order of magnitude, increase within non‐epitaxial inclusions in single crystal diamond film.