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Silicon‐containing defects in HPHT diamond synthetized in Mg–Si–C system
Author(s) -
Nadolinny Vladimir,
Komarovskikh Andrey,
Palyanov Yuri,
Borzdov Yuri,
Kupriyanov Igor,
Rakhmanova Mariana,
Yuryeva Olga
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532165
Subject(s) - electron paramagnetic resonance , photoluminescence , diamond , silicon , vacancy defect , materials science , spectral line , irradiation , atom (system on chip) , nitrogen , analytical chemistry (journal) , atomic physics , chemistry , nuclear magnetic resonance , crystallography , optoelectronics , physics , metallurgy , organic chemistry , chromatography , astronomy , computer science , nuclear physics , embedded system
Diamond crystals synthesized in the MgSiC system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S = 1 and S = 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split‐vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si‐V) − defect. X‐ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si‐V defect.