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Al(Ga)N/GaN high electron mobility transistors on silicon
Author(s) -
Cordier Yvon
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532070
Subject(s) - materials science , optoelectronics , transistor , heterojunction , substrate (aquarium) , silicon , high electron mobility transistor , electrical engineering , engineering , voltage , oceanography , geology
In this paper, a review of the different buffer layers and heterostructures developed for Al(Ga)N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The difficulties associated with the barrier thinning and the rise of the Al content are discussed. Finally, we compare the DC output characteristics and the small and large signal RF performances of thin barrier AlGaN/GaN HEMTs, thick barrier gate recessed ones, and ultra‐thin AlN barrier devices.