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Oxygen diffusion process in a Ba 0.96 La 0.04 SnO 3 thin film on SrTiO 3 (001) substrate as investigated by time‐dependent Hall effect measurements
Author(s) -
Lee WoongJhae,
Kim Hyung Joon,
Sohn Egon,
Kim Hoon Min,
Kim Tai Hoon,
Char Kookrin,
Kim Jin Hyeok,
Kim Kee Hoon
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532032
Subject(s) - oxygen , diffusion , substrate (aquarium) , analytical chemistry (journal) , perovskite (structure) , thin film , materials science , electrical resistivity and conductivity , electron mobility , chemistry , nanotechnology , crystallography , thermodynamics , optoelectronics , physics , oceanography , organic chemistry , engineering , chromatography , electrical engineering , geology
We investigate the oxygen diffusion phenomena in a Ba 0.96 La 0.04 SnO 3 (BLSO) thin film on SrTiO 3 (001) substrate by measurements of time‐dependent Hall effect at high temperatures around 500 °C under different gas atmosphere. Under the Ar (O 2 ) atmosphere, carrier density ( n ) and electrical conductivity ( σ ) are increased (decreased) while electron mobility ( µ ) is slightly reduced (enhanced). This observation supports that although both n and µ are affected by the oxygen diffusion process, the change of n is a major factor of determining σ in the BLSO film. Detailed analyses of the time‐dependent n exhibit fast and slow dynamics that possibly correspond to the oxygen exchange reaction at the surface and oxygen diffusion into the BLSO grains, respectively. Fitting the time dependence of n reveals that the chemical diffusion coefficient of oxygen in the BLSO grains becomes ∼10 −16 cm 2 s −1 . This coefficient marks the lowest value among perovskite oxides around 500 °C, directly proving excellent thermal stability of oxygen in BLSO. The present results support that the donor‐doped BaSnO 3 system could be useful for realizing transparent semiconductor devices at high temperatures.