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Design and characterization of (Al, C)/p‐Ge/p‐BN/C isotype resonant electronic devices
Author(s) -
Al Garni S. E.,
Qasrawi A. F.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201532013
Subject(s) - materials science , thermionic emission , microwave , quantum tunnelling , optoelectronics , center frequency , germanium , electrical engineering , physics , electron , band pass filter , silicon , engineering , quantum mechanics
In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50‐μm thick p‐type BN on a 0.2‐μm thick p‐type germanium thin film. The modeling of current–voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak‐to‐valley current ratio of (PVCR) of 63 at a peak ( V p ) and valley ( V v ) voltages of 1.84 and 2.30 V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0–3.0 GHz displayed a bandstop filter properties with notch frequency ( f n ) of 2.04 GHz and quality factor ( Q ) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f n and Q to 2.70 GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.