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Synthesis, characterization, and electronic structure of few‐layer MoSe 2 granular films (Phys. Status Solidi A 12∕2014)
Author(s) -
Mutlu Zafer,
Wickramaratne Darshana,
Bay Hamed H.,
Favors Zachary J.,
Ozkan Mihrimah,
Lake Roger,
Ozkan Cengiz S.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201470275
Subject(s) - materials science , wafer , optoelectronics , characterization (materials science) , raman spectroscopy , monolayer , laser , annealing (glass) , electronics , electron beam physical vapor deposition , nanotechnology , band gap , layer (electronics) , thin film , optics , composite material , chemistry , physics
Atomically thin two‐dimensional (2D) transition‐metal dichalcogenides (TMDs) have attracted great attention recently due to their fascinating electronic properties. MoSe 2 , with an indirect band gap in the bulk form and a direct band gap in the monolayer form, holds promise for the next‐generation electronics and optoelectronics applications. In their study presented here, Mutlu et al. (pp. 2671–2676 ) report on the synthesis of few‐layer MoSe 2 granular fi lms in arbitrary shapes and patterns on SiO 2 wafers by rapid thermal processing (RTP) and Raman laser annealing of the stacked elemental layers, which are deposited using electron beam evaporation in the sequence of Mo/Se/Mo. Following the optimization of the thickness of the stacked elemental layers, rapid thermal processing conditions (growth temperature, time and heating–cooling rates) and laser parameters (wavelength, power and exposure time), the quality of MoSe 2 can be further improved, and the methods presented can be implemented for the synthesis of other dichalcogenide materials and their hybrid systems with a broad‐range of functionalities and applications.