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Chemical vapor deposited graphene: From synthesis to applications (Phys. Status Solidi A 11∕2014)
Author(s) -
Kataria S.,
Wagner S.,
Ruhkopf J.,
Gahoi A.,
Pandey H.,
Bornemann R.,
Vaziri S.,
Smith A. D.,
Ostling M.,
Lemme M. C.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201470269
Subject(s) - graphene , nanotechnology , chemical vapor deposition , materials science , electronics , nanoelectromechanical systems , scalability , engineering physics , computer science , engineering , electrical engineering , nanoparticle , nanomedicine , database
Graphene, the “wonder material of the 21st century”, has unleashed a new era of nanoscience and nanotechnology based on two‐dimensional crystals. Its exceptional physical properties imply significant impact on diverse fields ranging from electronics to mechanics to chemistry and biology. In the last few years, significant research is dedicated to the development of scalable graphene production methods and the demonstration of its enormous potential in functional devices. One of the major issues in the quest for applications of graphene in the electronics industry is its incorporation in compatible manufacturing technologies and process flows. In particular, large‐scale growth of graphene and – if direct growth remains elusive – its successful transfer on desired substrates is key for its commercialization. Chemical vapor deposition (CVD) techniques provide a boost in this direction with scalable production of graphene on metals. In their Review Article (pp. 2439–2449 ), Max Lemme and co‐workers present an overview of existing CVD methods to produce graphene at large‐scale and discuss various methods for transferring graphene. The authors also highlight briefly the potential electronic applications of graphene including vertical hot electron transistors and graphene based nanoelectromechanical (NEMS) sensors.