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Investigation of ISFET device parameters to optimize for impedimetric sensing of cellular adhesion (Phys. Status Solidi A 6∕2014)
Author(s) -
Susloparova Anna,
Vu Xuan Thang,
Koppenhöfer Dieter,
Law Jessica KaYan,
Ingebrandt Sven
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201470236
Subject(s) - transistor , materials science , optoelectronics , substrate (aquarium) , field effect transistor , isfet , adhesion , electronic engineering , electrical impedance , nanotechnology , electrical engineering , voltage , engineering , composite material , oceanography , geology
Field‐effect transistor (FET) devices for Electrical Cell‐substrate Impedance Spectroscopy (ECIS®) are a novel tool for in vitro diagnostics complementing the well‐established ECIS® method with higher spatial resolution. In this publication (pp. 1395–1403 ), Susloparova et al. describe how they were able to use an electronic equivalent circuit for the cell‐transistor contact to optimize the FET chip design for improved performance. From their simulations the authors found that higher contact line capacitances of the source and drain contact lines are able to shift the cell adhesion effects to more moderate frequencies in the range of 200 kHz. For larger differences in the spectra, the transconductances of the FETs needed to be increased as well. The authors used these simulations to design a new generation of FET devices and successfully fabricate them in clean room facilities. In the electronic cell‐adhesion experiments this new generation of devices showed superior performance compared to an earlier version. In addition the new devices have an almost flat topology enabling single‐cell migration experiments. With this approach, ECIS® can now be expanded to non‐confluent cell types as well.