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Development of gallium oxide power devices (Phys. Status Solidi A 1∕2014)
Author(s) -
Higashiwaki Masataka,
Sasaki Kohei,
Kuramata Akito,
Masui Takekazu,
Yamakoshi Shigenobu
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201470201
Subject(s) - mesfet , materials science , optoelectronics , wafer , diode , schottky diode , gallium oxide , transistor , band gap , schottky barrier , wide bandgap semiconductor , power semiconductor device , oxide , field effect transistor , electrical engineering , voltage , engineering , metallurgy
A promising wide bandgap alternative that has been overlooked up until now is gallium oxide (Ga 2 O 3 ). Thanks to material properties related to its bandgap (4.7–4.9 eV) that is significantly larger than that of SiC and GaN, this oxide promises to enable the production of devices with higher breakdown voltages and higher efficiencies than those stemming from its wide bandgap rivals. What's more, Ga 2 O 3 power devices could be manufactured at low cost in high volume, because it is possible to produce single‐crystal native substrates from a melt using the same method employed for manufacturing sapphire substrates. Metal‐semiconductor field‐effect transistors (MESFETs) and Schottky barrier diodes (SBDs) fabricated on single‐crystal Ga 2 O 3 substrates have already demonstrated reasonably good device characteristics for considering high‐performance power electronics application in the near future. For further details see the Invited Article by Higashiwaki et al. (pp. 21–26 ). The cover page shows schematic illustrations of the Ga 2 O 3 MESFETs and SBDs, and a photograph of a 2’’‐diameter Ga 2 O 3 wafer, on a micrograph of a ring‐pattern MESFET.