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Aluminium‐ and gallium‐doped homoepitaxial ZnO thin films: Strain‐engineering and electrical performance
Author(s) -
Lorenz Michael,
Weiss Tobias,
Schmidt Florian,
von Wenckstern Holger,
Grundmann Marius
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431929
Subject(s) - materials science , gallium , dopant , thin film , epitaxy , doping , electrical resistivity and conductivity , aluminium , conductivity , substrate (aquarium) , partial pressure , hall effect , electron mobility , composite material , optoelectronics , oxygen , nanotechnology , metallurgy , chemistry , electrical engineering , oceanography , engineering , layer (electronics) , organic chemistry , geology
Aluminium‐ and gallium‐doped ZnO thin films with nominal source target compositions of 0.1 and 1 wt % were grown homoepitaxially and in‐plane lattice matched on c ‐plane ZnO ( 00 . 1 ‾ ) single crystalline substrates. In dependence on dopant concentration and oxygen partial pressure during growth we found compressive or tensile out‐of‐plane epitaxial strain up to 0.1 % . Electrical investigations showed that the conductivity of the substrates alters transport properties at room temperature. Correct interpretation requires variable temperature Hall effect measurements. These reveal, that besides the contributions of the substrate and the deposited thin film an additional conduction channel, likely located at the surface of the samples must be considered to explain and model the temperature dependence of the free electron concentration and their mobility.