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Performance enhancement of gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure
Author(s) -
Yin Luqiao,
Bai Yang,
Nan Tingting,
Zhang Jianhua
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431821
Subject(s) - optoelectronics , materials science , light emitting diode , junction temperature , flip chip , gallium nitride , diode , chip , thermal resistance , voltage , nitride , power (physics) , thermal , electrical engineering , nanotechnology , layer (electronics) , engineering , physics , adhesive , quantum mechanics , meteorology
For the study of the performance enhancement of a gallium‐nitride‐based flip‐chip light‐emitting diode with through‐via structure (FC‐LED), FC‐LED and conventional high‐power light‐emitting diode (HP‐LED) were fabricated simultaneously with the same epitaxial structures and packaging processes. The optoelectronic results showed that the FC‐LED's performance of the multiple indices for radiant light and voltage parameters were, respectively, better than that of the conventional HP‐LED. One reason for this was that the thermal resistance of the FC‐LED chip was about 54% lower, which would induce less heat‐flux generation. This was in accordance with the simulation results of the p–n junction temperature. Another reason for this was that the extra parasitic resistance in the conventional HP‐LED chip would cause higher voltages and lower multiple indices of radiant power.