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Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs
Author(s) -
Power Máire,
Pomeroy James W.,
Otoki Yohei,
Tanaka Takeshi,
Wada Jiro,
Kuzuhara Masaaki,
Jantz Wolfgang,
Souzis Andrew,
Kuball Martin
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431788
Subject(s) - materials science , thermal conductivity , layer (electronics) , doping , optoelectronics , buffer (optical fiber) , diamond , wide bandgap semiconductor , gallium nitride , thermography , raman spectroscopy , thermal , temperature gradient , composite material , optics , infrared , electrical engineering , quantum mechanics , physics , meteorology , engineering
The thermal conductivity of the GaN buffer layer in AlGaN/GaN devices can be determined by measuring the vertical temperature gradient through this layer. In this work, diamond micro‐thermometers and standard micro‐Raman thermography were used to determine the surface and volumetric depth average temperature, respectively, of the carbon‐doped GaN buffer layer in AlGaN/GaN transistors. By comparing measured temperatures with finite element thermal simulation, a thermal conductivity of 200 ± 20 Wm −1 K −1 was obtained for a carbon‐doped GaN layer with a doping concentration of 10 17 cm −3 .