Nitrogen‐doped ZnO obtained by nitrogen plasma treatment | Zendy

Wang Dengkui | Zendy; Zhao Dongxu | Zendy; Wang Fei | Zendy; Yao Bin | Zendy; Shen Dezhen | Zendy

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Nitrogen‐doped ZnO obtained by nitrogen plasma treatment

Author(s) -

Wang Dengkui,

Zhao Dongxu,

Wang Fei,

Yao Bin,

Shen Dezhen

Publication year - 2015

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201431779

Subject(s) - homojunction , raman spectroscopy , materials science , plasma , nitrogen , doping , excited state , work function , rectification , analytical chemistry (journal) , acceptor , laser , atomic physics , chemistry , nanotechnology , optoelectronics , optics , physics , organic chemistry , quantum mechanics , chromatography , power (physics) , layer (electronics) , condensed matter physics

We carried out a nitrogen plasma treatment process to obtain N‐doped ZnO single crystal. The treated sample showed an acceptor related emission located at 3.354 eV when excited by a 325‐nm He–Cd laser at 85 K. Raman spectra revealed the formation of a bond between Zn and N atoms. The surface work function indicated increasing of hole concentration of the N‐plasma‐treated ZnO. By constructing a ZnO‐based homojunction, the I – V curve displayed perfect rectification performance.

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