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Nitrogen‐doped ZnO obtained by nitrogen plasma treatment
Author(s) -
Wang Dengkui,
Zhao Dongxu,
Wang Fei,
Yao Bin,
Shen Dezhen
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431779
Subject(s) - homojunction , raman spectroscopy , materials science , plasma , nitrogen , doping , excited state , work function , rectification , analytical chemistry (journal) , acceptor , laser , atomic physics , chemistry , nanotechnology , optoelectronics , optics , physics , organic chemistry , quantum mechanics , chromatography , power (physics) , layer (electronics) , condensed matter physics
We carried out a nitrogen plasma treatment process to obtain N‐doped ZnO single crystal. The treated sample showed an acceptor related emission located at 3.354 eV when excited by a 325‐nm He–Cd laser at 85 K. Raman spectra revealed the formation of a bond between Zn and N atoms. The surface work function indicated increasing of hole concentration of the N‐plasma‐treated ZnO. By constructing a ZnO‐based homojunction, the I – V curve displayed perfect rectification performance.