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Self‐assembled silicon nanocrystal arrays for photovoltaics
Author(s) -
Schnabel M.,
Weiss C.,
Löper P.,
Wilshaw P. R.,
Janz S.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431764
Subject(s) - materials science , photovoltaics , quantum dot , nanocrystal , tandem , silicon , superlattice , optoelectronics , band gap , quantum dot solar cell , photoluminescence , nanotechnology , annealing (glass) , crystalline silicon , conductivity , photovoltaic system , monocrystalline silicon , composite material , chemistry , electrical engineering , engineering
Silicon nanocrystals (Si NCs) are a promising candidate for the top cell of Si tandem solar cells since their bandgap exceeds that of bulk silicon and can be tuned by adjusting nanocrystal size. Due to this effect, size control is required to maintain a uniform bandgap throughout a Si NC film. This can be achieved by annealing superlattices of Si‐rich and stoichiometric dielectrics. This paper reviews the progress that has been made using host matrices SiO 2 , Si 3 N 4 , and SiC. Si NCs in SiO 2 show excellent NC size and shape control and strong quantum‐confinement‐related photoluminescence, however electrical conductivity is poor. Ordering and size control is also obtained in Si 3 N 4 , but conclusive evidence of quantum confinement is lacking. Preparing ordered but separated Si NCs in SiC is difficult, but the narrow parameter space in which this is possible has been elucidated, good electrical conductivity was obtained, and functioning single‐junction and tandem cells have been produced. Si NC formation can now be well‐controlled in all three materials, and the key weaknesses for photovoltaics have been identified to be the electrical conductivity of SiO 2 , and defect density for Si 3 N 4 and SiC. Addressing these is expected to lead to competitive Si tandem solar cells.