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E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW
Author(s) -
Ivanov S. V.,
Jmerik V. N.,
Nechaev D. V.,
Kozlovsky V. I.,
Tiberi M. D.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431756
Subject(s) - materials science , optoelectronics , heterojunction , molecular beam epitaxy , excitation , beam (structure) , power density , power (physics) , cathode ray , scanning electron microscope , optics , electron , epitaxy , physics , nanotechnology , layer (electronics) , quantum mechanics , composite material
A 60 mW output power has been achieved in mid‐UV ( λ = 270 nm) spontaneous sources with electron‐beam pulse‐scanning pumping, fabricated from AlGaN MQW heterostructures grown by PA MBE on c‐Al 2 O 3 substrates. Under the CW pumping at much lower excitation power density the mid‐UV sources demonstrate a 4.7 mW output power. In that regime the power efficiency of the structures is about 0.24%, while their internal quantum efficiency is estimated to be as high as 50%.