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Luminescence properties of InGaN‐based dual‐wavelength light‐emitting diodes with different quantum‐well arrangements
Author(s) -
Zhang Minyan,
Yun Feng,
Li Yufeng,
Ding Wen,
Wang Hong,
Zhao Yukun,
Zhang Weihan,
Zheng Min,
Tian Zhenhuan,
Su Xilin,
Hou Xun
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431748
Subject(s) - indium , optoelectronics , light emitting diode , quantum well , materials science , wavelength , diode , indium gallium nitride , polarization (electrochemistry) , luminescence , optics , quantum efficiency , physics , chemistry , laser
Optimized dual‐wavelength InGaN‐based vertical light‐emitting diode (LEDs) structures were investigated by numerical simulations. The results show that different quantum‐well arrangements in the active region play an important role in obtaining dual‐wavelength emission. It is a better way to obtain the dual‐wavelength with uniform intensity by arranging quantum wells (QW) with low indium content near the p‐side and the QW with high indium near the n‐side. This is because the QWs with lower indium near the p‐side layer have higher hole‐injection efficiency. On the other hand, arranging QW with high indium content near the p‐side leads to poor hole‐injection efficiency due to the high polarization fields. The physical and optical mechanisms of these phenomena were explained by the intensity of electrostatic fields, energy‐band diagrams, and carrier‐concentration distribution in the active region of LEDs.