Premium
Normally‐off GaN MIS‐HEMT using a combination of recessed‐gate structure and CF 4 plasma treatment
Author(s) -
Park Youngrak,
Kim Jungjin,
Chang Woojin,
Jung Dongyun,
Bae Sungbum,
Mun Jaekyung,
Jun ChiHoon,
Ko Sangchoon,
Nam Eunsoo
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431737
Subject(s) - high electron mobility transistor , materials science , optoelectronics , threshold voltage , transistor , plasma , electronegativity , gallium nitride , semiconductor , voltage , electrical engineering , nanotechnology , layer (electronics) , chemistry , engineering , physics , organic chemistry , quantum mechanics
The combination of a recessed‐gate structure and CF 4 plasma treatment was studied to realize a normally‐off operation of a AlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistor (MIS‐HEMT) for power electronics applications. We verified that fluorine ions incorporated with a strong electronegativity increase the threshold voltage ( V th ). In addition, CF 4 plasma treatment slightly etches the AlGaN surface as deeply as 25 Å. A fabricated device exhibits a threshold voltage of as high as 2.6 V. Using a combination of gate recess and plasma treatment processes, the device demonstrates a tremendous potential of normally‐off AlGaN/GaN MIS‐HEMTs for power electronics applications.