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Core–shell nanowire diode based on strain‐engineered bandgap
Author(s) -
Liu Pengbo,
Huang Hui,
Liu Xueyu,
Bai Min,
Zhao Danna,
Tang Zhenan,
Huang Xianliang,
Kim JiYeun,
Guo Jinwei
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431727
Subject(s) - nanowire , materials science , tapering , optoelectronics , diode , strain engineering , band gap , core (optical fiber) , shell (structure) , piezoelectricity , semiconductor , strain (injury) , electric field , composite material , silicon , medicine , computer graphics (images) , physics , quantum mechanics , computer science
Bandgap engineering is important for realizing high‐performance semiconductor devices. In this paper, an investigation on the nanowire diode with a tapered InAs/InP core–shell structure was carried out. The strain distribution along the nanowire can be changed via the shell thickness and the gradient of the tapering. Due to the misfit‐strain between InAs/InP, a strain‐induced bandgap variation of 0.21 eV along the tapered InAs wire, which results in the rectifying I – V characteristic of the diode, was realized with an InP shell thickness of 6.5 nm. Moreover, due to the optimized shell thickness and strain‐induced built‐in electric field (including piezoelectric field), a recorded room‐temperature electron mobility of 22300 cm 2 V −1 s −1 was achieved. This concept of bandgap engineering would enable the designing of a new kind of nanowire device.