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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes
Author(s) -
Kang He,
Wang Quan,
Xiao Hongling,
Wang Cuimei,
Jiang Lijuan,
Feng Chun,
Chen Hong,
Yin Haibo,
Qu Shenqi,
Peng Enchao,
Gong Jiamin,
Wang Xiaoliang,
Li Baiquan,
Wang Zhanguo,
Hou Xun
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431719
Subject(s) - materials science , optoelectronics , reverse leakage current , schottky diode , schottky barrier , diode , layer (electronics) , wide bandgap semiconductor , gallium nitride , reliability (semiconductor) , barrier layer , degradation (telecommunications) , electronic engineering , nanotechnology , power (physics) , physics , quantum mechanics , engineering
In this paper, AlGaN/GaN‐ and GaN/AlGaN/GaN‐based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward current decay of the devices. What is more important, the GaN/AlGaN/GaN‐based SBDs are capable of greatly alleviating the unrecoverable degradation of the reverse characteristics, which was observed in the device without a GaN cap layer when the device was under long time reverse dc stress. Detailed analyses were discussed.