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Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes
Author(s) -
Marioli M.,
Meneghini M.,
Rossi F.,
Salviati G.,
de Santi C.,
Mura G.,
Meneghesso G.,
Zai E.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431714
Subject(s) - cathodoluminescence , degradation (telecommunications) , diode , stress (linguistics) , materials science , reliability (semiconductor) , laser , optoelectronics , power (physics) , optics , electrical engineering , thermodynamics , physics , luminescence , linguistics , philosophy , engineering
This paper presents a detailed analysis of the degradation kinetics and of the reliability of state‐of‐the‐art InGaN‐based green laser diodes (LDs), submitted to CW stress tests at different operating conditions. Results described in the following indicate that: (i) constant current stress induces an increase in threshold current ( I th ), which is well correlated to a decrease in the sub‐threshold emission; (ii) the I th increase has a power law dependence on stress time; (iii) the degradation rate is strongly dependent on the stress current level while it does not significantly depend on the optical field in the cavity; (iv) stress temperature acts as an accelerating factor for LDs degradation; the activation energy of the degradation process is equal to 258 meV; (v) pure thermal storage does not induce a significant degradation of device characteristics. Cathodoluminescence measurements were carried out to get more insight into the physical origin of the degradation process.