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Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐ doped GaN/undoped GaN multi‐layered buffer structure
Author(s) -
Kang HeeSung,
Won ChulHo,
Kim YoungJo,
Kim DongSeok,
Yoon Young Jun,
Kang In Man,
Lee Yong Soo,
Lee JungHee
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431668
Subject(s) - materials science , optoelectronics , heterojunction , buffer (optical fiber) , doping , layer (electronics) , transistor , wide bandgap semiconductor , resistive touchscreen , current (fluid) , gallium nitride , voltage , nanotechnology , electrical engineering , engineering
We present a new semi‐insulating carbon‐doped GaN/undoped GaN multi‐layered buffer structure for AlGaN/GaN heterojunction field effect transistors, which drastically suppresses current collapse in GaN MISHFET with improving the on‐current performance of the device but without degrading the breakdown characteristic. It is believed that spatial compensation between the multi‐layered GaN layers not only makes the multi‐layered buffer layer very highly resistive, but also prevents the electrons from the 2DEG channel from being captured into deep traps in the buffer layer, which maintains high‐high breakdown characteristic and leads to great suppression of current collapse in AlGaN/GaN‐based transistors, respectively.