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High temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN using selective epi removal
Author(s) -
Li Z.,
Waldron J.,
Chowdhury S.,
Zhao L.,
Detchprohm T.,
Wetzel C.,
Karlicek R. F.,
Chow T. P.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431660
Subject(s) - high electron mobility transistor , materials science , optoelectronics , light emitting diode , channel (broadcasting) , transistor , electrical engineering , voltage , engineering
In this paper, we have investigated the high temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN. The monolithically integrated LED/MOSC‐HEMT was implemented by using a selective epi removal approach. The temperature dependence of optical and electrical characteristics of the integrated LED is found to be comparable to that of discrete GaN based LEDs. On‐resistance of the MOSC‐HEMT shows gradual increase with temperature (~1.6× increase from 25 °C to 225 °C) whereas LED LOP shows rapid decrease with temperature (~6× decrease from 25 °C to 225 °C). Light output of the integrated LED is modulated by the MOSC‐HEMT gate bias up to 225 °C.