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Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs
Author(s) -
Guo Zhibo,
Chow T. Paul
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431657
Subject(s) - transconductance , materials science , high electron mobility transistor , optoelectronics , transistor , figure of merit , channel (broadcasting) , threshold voltage , channel length modulation , voltage , electrical engineering , engineering
Channel length downscaling characteristics of various lateral AlGaN/GaN high electron mobility transistors (HEMTs) are simulated. Quasi‐constant‐field scaled MOS channel HEMTs show superior performance over two‐dimensional electron gas (2DEG) channel HEMTs at deep submicron channel lengths. The adverse effects of deep submicron channel length on threshold voltage, drain‐induced barrier lowering, subthreshold swing, transconductance and on‐off current ratio are seen to be much less pronounced in MOS channel HEMTs compared with 2DEG channel HEMTs. Switching capabilities of enhancement mode HEMTs at different channel lengths are evaluated and compared using a new intrinsic maximum switching frequency ( f m,IG ) figure‐of‐merit.