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Low‐temperature transport of charge carriers in InGaN/GaN multiple quantum well light‐emitting diodes
Author(s) -
Prudaev Ilya,
Tolbanov Oleg,
Khludkov Stanislav
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431646
Subject(s) - diode , electron , optoelectronics , light emitting diode , space charge , current (fluid) , charge carrier , charge (physics) , voltage , materials science , quantum well , quantum , condensed matter physics , physics , optics , quantum mechanics , laser , thermodynamics
The results of experimental investigation of forward current‐voltage characteristics of InGaN/GaN multiple quantum well light‐emitting diodes are presented. A new model for explaining the complex current dependence on voltage is proposed. The model is based on the assumption of space charge limited current, and ballistic overflow of electrons through the multiple quantum well region. It is shown that electrons are captured in the shallow traps while transferring through the active region. The results of measurements indicate that the activation energy of traps decreases with a temperature decrease, which corresponds to the theory of hopping in exponential band tails.