Premium
Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers
Author(s) -
Takei Yusuke,
Kamiya Masayuki,
Tsutsui Kazuo,
Saito Wataru,
Kakushima Kuniyuki,
Wakabayashi Hitoshi,
Kataoka Yoshinori,
Iwai Hiroshi
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431645
Subject(s) - high electron mobility transistor , materials science , layer (electronics) , optoelectronics , contact resistance , enhanced data rates for gsm evolution , fermi gas , electron , transistor , composite material , electrical engineering , computer science , voltage , physics , telecommunications , quantum mechanics , engineering
A new technique to reduce contact resistance on AlGaN/GaN HEMTs was proposed. This method introduced uneven AlGaN layer structures. 2D device simulations revealed a clear increase in two‐dimensional electron gas (2DEG) concentration near the edge regions where the AlGaN layer thickness fluctuated. This fringing effect is useful because metal and high‐density 2DEG can approach each other, overcoming an inherent tradeoff involving the AlGaN layer thickness. Experiments demonstrated the effectiveness of this technique, in which contact resistances obtained on some structures with uneven AlGaN layers were lower than the lowest limit for conventional flat AlGaN structures.