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Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C–V and dynamic on‐resistance measurements
Author(s) -
Liao WenChia,
Chyi JenInn,
Hsin YueMing
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431643
Subject(s) - materials science , degradation (telecommunications) , optoelectronics , transistor , electric field , stress (linguistics) , field (mathematics) , voltage , electronic engineering , electrical engineering , physics , engineering , mathematics , linguistics , philosophy , quantum mechanics , pure mathematics
Stressed C–V measurement was used to extract the trap profiles in AlGaN/GaN HFETs with field plates enduring high‐voltage off‐state stress. The C – V measurement results also correlated with the degradation in dynamic on‐resistance ( R DS,on ) after transistors were stressed with similar stress conditions. Based on the correlation between the trap profiles and dynamic R DS,on degradation, the location with high electric field that determines the major degradation is determined. Finally, a new source field plate is proposed and demonstrated to improve the dynamic performance degradation.