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Site‐controlled growth of GaAs nanoislands on pre‐patterned silicon substrates
Author(s) -
Usman Muhammad,
Reithmaier Johann Peter,
Benyoucef Mohamed
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431459
Subject(s) - silicon , materials science , nanotechnology , optoelectronics
GaAs islands have been grown by molecular beam epitaxy on Si (100) substrates patterned with nanoscale holes using only few monolayer deposition thicknesses. The site‐controlled growth has been achieved without masking the Si surface with SiO 2 between the patterned holes. The nucleation density of GaAs islands between the patterned holes shows a strong dependence on the growth temperature, V/III beam flux ratio and nominal deposition thickness. Through the selection of optimal growth parameters GaAs islands have been grown highly selectively in the patterned holes over a wide range of hole diameters for fixed spacing as well as over a wide range of spacings for fixed diameter of the holes. The influence of pattern features (hole diameter, spacing) on the morphological properties of the site‐controlled GaAs islands has been investigated in detail. A (5 × 5) μm 2 AFM image of GaAs nanoislands selectively grown in patterned holes with 70 nm diameter and a spacing of 0.5 μm on Si substrate.