Origin of channel/dielectric interfacial trap states modification by ultraviolet irradiation on organic thin‐film transistors

The authors report on the origin of channel/dielectric interfacial states modified by ultraviolet (UV) irradiation on pentacene thin‐film transistors (TFTs) with poly‐4‐vinylphenol and AlO x double gate dielectric. Exposing the device to 352 nm UV irradiation on caused a positive threshold voltage ( V th ) shift, and then photo‐excited charge‐collection spectroscopy (PECCS) was applied to the device to clarify the changes of the interfacial density of states (DOS) as the origin of V th modification. From the PECCS measurement, it could be probed that there was a drastic decrease in DOS for deep traps at ∼1.31 and ∼1.38 eV above the highest occupied molecular orbital level of pentacene. Consequently, we can conclude that the positive shift of V th for pentacene‐TFT by UV irradiation results from the elimination of deep hole traps, which could be introduced by the interfacial dipoles at the channel/dielectric interface.