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Cobalt phthalocyanine‐based submicrometric field‐effect transistors
Author(s) -
Golmar Federico,
Stoliar Pablo,
Monton Carlos,
Valmianski Ilya,
Schuller Ivan K.,
Hueso Luis E.,
Casanova Fèlix
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431409
Subject(s) - miniaturization , materials science , phthalocyanine , field effect transistor , transistor , optoelectronics , fabrication , electrode , organic field effect transistor , cobalt , degradation (telecommunications) , grain size , nanotechnology , electronic engineering , chemistry , electrical engineering , voltage , metallurgy , medicine , alternative medicine , engineering , pathology
We present performance characteristics of nanoscaled cobalt phthalocyanine (CoPc)‐based organic field‐effect transistors (OFETs) as a function of channel length. We found a channel length range which maximizes the field effect mobility in a trade‐off between the decrease in the number of organic grain boundaries and the increase of the electrode–organic contact region. Further reduction of channel length is limited by fringe currents, which lead to an increased off current and to a degradation of the sub‐threshold slope. From this, we define an optimal channel length of 280 nm to 1 μm for applications in submicrometric CoPc‐based OFETs. Our results are particularly relevant for the miniaturization of chemical sensing OFETs, where metal phthalocyanines have proven to be excellent candidates for the fabrication of the transistor channel.