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Spatially localised luminescence emission properties induced by formation of ring‐shaped quasi‐potential trap around V‐pits in InGaN epi‐layers
Author(s) -
Tao Tao,
Zhi Ting,
Liu Bin,
Li Yi,
Zhuang Zhe,
Xie Zili,
Chen Dunjun,
Chen Peng,
Zhang Rong,
Zheng Youdou
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431398
Subject(s) - cathodoluminescence , materials science , luminescence , photoluminescence , optoelectronics , light emitting diode , chemical vapor deposition , spontaneous emission , spectroscopy , metalorganic vapour phase epitaxy , radiative transfer , ring (chemistry) , diode , molecular physics , optics , laser , chemistry , nanotechnology , layer (electronics) , physics , epitaxy , organic chemistry , quantum mechanics
The correlation between surface structural and luminescence properties of InGaN epi‐layers grown by metal organic chemical vapour deposition has been investigated. Ring‐shaped regions with high In‐content are observed around V‐pits by spatial resolved cathodoluminescence and energy dispersive X‐ray spectroscopy. These ring‐shaped regions are found to form a potential energy well with depth about 300 meV with respect to the ordinary regions, which can attract carriers and suppress non‐radiative recombination. The causes of the formation of high‐In‐content region are discussed. This localised characteristic of carriers is supported further by power and temperature dependent photoluminescence results. The understanding of the spatially emission characteristics might be helpful to improving the internal quantum efficiency of InGaN/GaN light emitting diodes (LEDs).