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Effects of in‐situ molecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition
Author(s) -
Park Hui Kyung,
Yang Bong Seob,
Kim Myung Sang,
Park Sanghyun,
Han Jeong Hwan,
Shin Jae Cheol,
Heo Jaeyeong
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431390
Subject(s) - thin film , zinc , atomic layer deposition , materials science , diethylzinc , oxygen , thin film transistor , layer (electronics) , oxide , optoelectronics , deposition (geology) , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , catalysis , environmental chemistry , organic chemistry , paleontology , sediment , biology , enantioselective synthesis
The possibility of employing molecular oxygen (O 2 ) for reducing the carrier concentration of zinc oxide (ZnO) thin films grown by atomic layer deposition was investigated. The exposure of O 2 after the oxygen‐source pulse (deionised water) was eventually highly effective for decreasing the carrier concentration over 3–4 orders of magnitude. In contrast, the O 2 pulse, when following the zinc source pulse (diethylzinc), had a minimal effect on the electrical property. Detailed structural, chemical and electrical analyses of the oxygen‐modulated ZnO thin films were conducted. Successful electrical modulation of the ZnO thin films was further demonstrated by fabricating back‐gated thin film transistors. The improvement in the on‐to‐off current ratio of the transistors was achieved by the proper exposure of O 2 .