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Mg doping of 3D semipolar InGaN/GaN‐based light emitting diodes
Author(s) -
Wang Junjun,
Gao Yumin,
Alam Saiful,
Scholz Ferdinand
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431369
Subject(s) - materials science , ohmic contact , light emitting diode , optoelectronics , doping , diode , facet (psychology) , layer (electronics) , electroluminescence , nanotechnology , psychology , social psychology , personality , big five personality traits
The effects of different Mg doping concentrations in the main p‐GaN layer and the p‐GaN capping layer on the electroluminescence (EL) properties of three‐dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross‐section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p‐GaN, indicating a higher Mg incorporation efficiency on the { 10 1 ¯ 1 } facet as compared to the { 11 2 ¯ 2 } facet. The EL output power is low with a too low Mg concentration of 3 × 10 19 cm −3 , probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4 × 10 19 cm −3 until 1.3 × 10 20 cm −3 for the 3D LEDs with the { 10 1 ¯ 1 } facet. Heavy Mg doping in the p‐GaN capping layer is required to achieve good ohmic contact performance.