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Improved performance of Ga 2 O 3 /ITO‐based transparent conductive oxide films using hydrogen annealing for near‐ultraviolet light‐emitting diodes
Author(s) -
Kim Sukwon,
Kim Su jin,
Kim Kyeong heon,
Kim Heedong,
Kim Tae geun
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431278
Subject(s) - materials science , ohmic contact , indium tin oxide , optoelectronics , annealing (glass) , sheet resistance , transparent conducting film , oxide , ultraviolet , tin oxide , diode , transmittance , hydrogen , electrical conductor , thin film , nanotechnology , composite material , doping , metallurgy , chemistry , layer (electronics) , organic chemistry
We investigated the use of transparent conductive oxide for near‐ultraviolet light‐emitting diodes based on co‐sputtered gallium oxide (Ga 2 O 3 ) and indium tin oxide (ITO). The electrical and optical properties of Ga 2 O 3 /ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164 Ω/□ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co‐sputtered film through hydrogen annealing. Moreover, ohmic‐like contacts were formed on the p‐GaN substrate with a specific contact resistance of 3.9 × 10 −1 Ω cm 2 .