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Comparative study of encapsulated solution‐processed zinc oxide ultraviolet photodetectors with different contacts
Author(s) -
Li Siying,
Tang Wei,
Xu Xiaoli,
Cao Motao,
Jin Yizheng,
Guo Xiaojun
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431220
Subject(s) - ohmic contact , materials science , ultraviolet , photodetector , polydimethylsiloxane , optoelectronics , schottky diode , schottky barrier , zinc , aluminium , electrode , oxide , aluminum oxide , nanotechnology , layer (electronics) , composite material , chemistry , diode , metallurgy
Ultraviolet (UV) photodetectors were fabricated with low temperature (<150 °C) solution‐processed zinc oxide (ZnO) layers. A polydimethylsiloxane (PDMS) layer was used as the encapsulation to protect the devices from ambient effects. Current–voltage ( I–V ) characteristics, transient characteristics, and the encapsulation effect were compared for ohmic and Schottky contact devices that were formed with aluminum and silver electrodes, respectively. Schottky contact devices were shown to be able to achieve rapid response with the recovery time not affected by the encapsulation.