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Aluminum doping of CuInSe 2 synthesized by solution process and its effect on structure, morphology, and bandgap tuning
Author(s) -
Yan Zhi,
Deng Weizhi,
Zhang Xia,
Yuan Qian,
Deng Peiran,
Liang Jun,
Sun Lei
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431186
Subject(s) - materials science , doping , band gap , annealing (glass) , ionic radius , crystal structure , crystal (programming language) , solar cell , surface roughness , grain size , optoelectronics , crystallography , composite material , chemistry , ion , organic chemistry , computer science , programming language
Al‐doped CuInSe 2 material is prepared by a low‐cost wet chemical process. The key properties of Al‐doped CuInSe 2 as a successful solar cell material are investigated, such as crystal structure, morphology, optical properties, and bandgap. In situ X‐ray diffraction measurements indicate that the doping of Al has induced noticeable lattice distortion. The material shows excellent thermal stability up to 600 °C annealing temperature. By increasing the Al‐doping concentration, the crystal unit‐cell parameter of the material becomes smaller and the change of crystal structure leads to an increase of the grain size and surface roughness. The bandgap of Al‐doped CuInSe 2 can be continuously tuned in a range of 1.07–1.67 eV as Al/(Al + In) content ratio varies from 0 to 0.49. Finally, the effect mechanism on the properties of CuInSe 2 after Al doping is discussed based on the ionic radius, crystal structure, and bonding state.