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Diamond as substrate for 3C‐SiC growth: A TEM study
Author(s) -
Lloret F.,
Piñero J.,
Araujo D.,
Villar M. P.,
Gheeraert E.,
VoHa A.,
Soulière V.,
Rebaud M.,
Carole D.,
Ferro G.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431179
Subject(s) - diamond , materials science , transmission electron microscopy , stacking , dark field microscopy , crystallography , substrate (aquarium) , silicon carbide , optoelectronics , composite material , optics , nanotechnology , microscopy , chemistry , geology , physics , organic chemistry , oceanography
Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy (TEM). Diffraction contrast (CTEM) observations allowed confirming the growth of fully lattice relaxed SiC 3C‐type crystalline structure. Defects as dislocations at the diamond/SiC interface and stacking faults, in the thick SiC layer are revealed by high resolution TEM and CTEM. From the invisibility criteria, using dark field observations, 〈110〉 type Burger vector are identified.