Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior | Zendy

Piñero J. C. | Zendy; Araujo D. | Zendy; Traoré A. | Zendy; Chicot G. | Zendy; Maréchal A. | Zendy; Muret P. | Zendy; Alegre M. P. | Zendy; Villar M. P. | Zendy; Pernot J. | Zendy

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Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Author(s) -

Piñero J. C.,

Araujo D.,

Traoré A.,

Chicot G.,

Maréchal A.,

Muret P.,

Alegre M. P.,

Villar M. P.,

Pernot J.

Publication year - 2014

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201431178

Subject(s) - transmission electron microscopy , oxide , electron energy loss spectroscopy , materials science , diamond , schottky diode , high resolution transmission electron microscopy , metal , dark field microscopy , scanning transmission electron microscopy , field electron emission , energy filtered transmission electron microscopy , schottky barrier , analytical chemistry (journal) , optoelectronics , nanotechnology , electron , microscopy , chemistry , optics , composite material , metallurgy , physics , chromatography , diode , quantum mechanics

Metal and oxide distribution in diamond metal–oxide–semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale. To understand their electrical behavior, oxygen distribution using electron energy loss spectroscopy (EELS) through the layer structure, high‐resolution electron microscopy (HREM), and annular dark field (ADF) observations are reported. Oxide thickness variations, as well as oxygen content variations have been identified and characterized at an atomic resolution. The latter allows to understand the related electrical behavior as, for example, leakages or shortcuts.

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