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Quantitative modeling of the temperature‐dependent internal quantum efficiency in InGaN light emitting diodes
Author(s) -
Nirschl Anna,
GomezIglesias Alvaro,
Sabathil Matthias,
Hartung Georg,
Off Jürgen,
Bougeard Dominique
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431155
Subject(s) - quantum efficiency , materials science , optoelectronics , diode , light emitting diode , auger effect , diffusion , epitaxy , computational physics , auger , physics , atomic physics , thermodynamics , nanotechnology , layer (electronics)
The temperature dependence of the internal quantum efficiency (IQE) of blue InGaN‐based light emitting diodes is analyzed both experimentally and theoretically with a drift‐diffusion transport model. A high‐performance reference structure and two improved epitaxial designs are compared at different operating temperatures. In contrast to a simple ABC model, the proposed approach allows for quantitative predictions of IQEs including optimizations regarding spatial carrier distributions at room temperature. At elevated temperatures, a moderate increase of the Auger coefficient gives a more precise agreement between experiment and simulations. The results show that the model is suitable to quantitatively predict the IQE for different structures and temperatures.