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Large‐grained Cu 2 ZnSnS 4 layers sintered from Sn‐rich solution‐deposited precursors
Author(s) -
SutterFella Carolin M.,
Uhl Alexander R.,
Romanyuk Yaroslav E.,
Tiwari Ayodhya N.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431147
Subject(s) - czts , inert gas , sintering , materials science , annealing (glass) , thiourea , inert , sulfur , reducing atmosphere , crystallization , metal , grain growth , chemical engineering , grain size , coating , layer (electronics) , metallurgy , chemistry , nanotechnology , composite material , organic chemistry , engineering
Cu 2 ZnSnS 4 (CZTS) layers are deposited by a direct solution coating of metal salts dissolved in dimethyl sulfoxide (DMSO) and thiourea as sulphur source. An intentional Sn‐rich precursor is used and the influence of reactive and inert atmosphere on the layer morphology is investigated during high temperature sintering. Larger grain growth is observed when annealing the precursor in inert N 2 atmosphere as compared to reactive sulphur atmosphere. An initial Sn‐rich precursor composition with Zn/Sn < 1 promotes the grain growth while Sn leaves the sample during crystallization ending up with a final Zn‐rich (Zn/Sn > 1) layer composition.