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Growth of aluminum oxide nanorods using sandwich structures composed of Al and SiO x layers
Author(s) -
Yoon JongHwan
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431141
Subject(s) - nanorod , materials science , chemical vapor deposition , annealing (glass) , silicon , oxide , aluminium , chemical engineering , aluminum oxide , silicon oxide , thin film , plasma enhanced chemical vapor deposition , nanotechnology , composite material , metallurgy , silicon nitride , engineering
In this work, we report a simple method for growing aluminum oxide nanorods based on low‐temperature annealing of a sandwich structure composed of a thin Al film sandwiched between two silicon‐rich oxide (SiO x : 0 < x < 2) layers produced by plasma‐enhanced chemical vapor deposition. Aluminum oxide nanorods produced using a typical sandwich structure of SiO 1.4 (20 nm)/Al(2 nm)/SiO 1.4 (20 nm)/Si substrate exhibited the features of the mean diameter and length of the nanorods of about 0.3 and 1.7 μm, respectively. A possible growth mechanism is discussed on the basis of the vapor–solid process. The nanorod growth is proposed to be mediated by a vapor–solid mechanism in which the dominant vapor‐phase source of reactants is Al 2 O/AlO produced by a phase separation of SiO x .