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Multicrystalline silicon thin film solar cells on glass with epitaxially grown emitter prepared by a two‐step laser crystallization process
Author(s) -
Gawlik A.,
Plentz J.,
Höger I.,
Andrä G.,
Schmidt T.,
Brückner U.,
Falk F.
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431120
Subject(s) - materials science , common emitter , optoelectronics , epitaxy , silicon , fluence , amorphous silicon , crystallization , layer (electronics) , amorphous solid , laser , excimer laser , open circuit voltage , solar cell , monocrystalline silicon , thin film , crystalline silicon , optics , nanotechnology , voltage , electrical engineering , crystallography , chemical engineering , chemistry , physics , engineering
In this paper, we demonstrate a two‐step laser crystallization process for thin film silicon solar cells on glass. In a first step a 5 µm thick amorphous silicon layer is crystallized by a diode laser to get the absorber. The multicrystalline layer consists of grains with sizes in the range of 1 mm to 10 mm. In a second step a thin amorphous silicon layer is epitaxially crystallized by an excimer laser to form the emitter.Epitaxy was investigated in a fluence range of 700 to 1200 mJ/cm 2 . The resulting thickness of the emitter is measured and numerically simulated, both resulting in 185 nm for a fluence of 1100 mJ/cm 2 . The solar cells achieve maximum open circuit voltages of 548 mV, short‐circuit current densities of up to 22.0 mA/cm 2 and an efficiency of 8.0%.