Premium
The utilization of low‐temperature evaporable CsN 3 ‐doped NBphen as an alternative and efficient electron‐injection layer in OLED
Author(s) -
Chu Xin Bo,
Guan Min,
Niu Li Tao,
Zhang Yang,
Li Yi Yang,
Liu Xing Fang,
Zeng Yi Ping
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431090
Subject(s) - dopant , oled , doping , materials science , layer (electronics) , optoelectronics , evaporation , alkali metal , diode , current density , electron , chemistry , composite material , organic chemistry , thermodynamics , physics , quantum mechanics
Cesium azide (CsN 3 ) doped 2,9‐bis(naphthalen‐2‐yl)‐4,7‐diphenyl‐1,10‐phenanthroline (NBphen) has been demonstrated as an efficient electron‐injection layer (EIL) in this work. Advantageous for its low evaporation temperature and air stability, CsN 3 is employed as an n‐dopant to replace the reactive alkali metals or alkali metal compounds. Organic light‐emitting diodes utilizing this composite EIL exhibit highly improved current density–luminance–voltage characteristics compared to the control device with LiF. When C545T‐doped Alq 3 is used as an emitting layer, a maximum current efficiency of 10.4 cd A −1 can be reached. Our results indicate that this CsN 3 ‐doped NBphen composite layer has great potential as an alternative EIL in organic electronic devices.